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2N5551TFR

Manufacturer:

On Semiconductor

Mfr.Part #:

2N5551TFR

Datasheet:
Description:

BJTs TO-92-3 Through Hole NPN 625 mW Collector Base Voltage (VCBO):180 V Collector Emitter Voltage (VCEO):160 V Emitter Base Voltage (VEBO):6 V

ParameterValue
Voltage Rating (DC)160 V
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
PackagingReel
Radiation HardeningNo
RoHSCompliant
PolarityNPN
Contact PlatingTin
Frequency300 MHz
Number of Elements1
Current Rating600 mA
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation625 mW
Power Dissipation625 mW
Max Collector Current600 mA
Collector Emitter Breakdown Voltage160 V
Transition Frequency100 MHz
Element ConfigurationSingle
Max Frequency300 MHz
Collector Emitter Voltage (VCEO)160 V
Max Breakdown Voltage160 V
Gain Bandwidth Product300 MHz
Collector Base Voltage (VCBO)180 V
Collector Emitter Saturation Voltage200 mV
Emitter Base Voltage (VEBO)6 V
hFE Min80
Schedule B8541210080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Max Cutoff Collector Current50 nA
Transistor TypeNPN

Stock: 1174

Distributors
pcbx
Unit Price$0.09869
Ext.Price$0.09869
QtyUnit PriceExt.Price
1$0.09869$0.09869
10$0.08942$0.89420
50$0.08102$4.05100
100$0.07326$7.32600
500$0.06625$33.12500
1000$0.06241$62.41000
3000$0.05880$176.40000